Samsung gears up to meet growing demand for c...
페이지 정보
본문
South Korea’s tech giant Samsung Electronics Co. plans to actively respond to the growing demand for customized high-bandwidth memory HBM in the era of artificial intelligence AI. “In the early HBM market, hardware versatility was crucial, but as services mature around killer apps moving forward, hardware infrastructure will inevitably undergo a process of optimization for each service,” said Kim Kyung-ryun, vice president of memory product planning at Samsung Electronics. “We plan to unify core dies for data storage and diversify package and base dies to accommodate these changes.” His remarks were made in an in-house interview posted on Samsung Newsroom on Thursday. Kim was joined by Youn Jae-youn, vice president of DRAM development at Samsung Electronics‘ Device Solutions DS division. “The need for joint optimization will increase the demand for customization, and we will maximize common design elements through platformization and create a system that can efficiently respond to customization needs by expanding the ecosystem of partners,” Kim said. The vice president also noted an industry consensus that processor and memory companies individually optimizing products could find it difficult to create future innovations demanded by the era of general artificial intelligence AGI. He stressed that “custom HBM is a bridgehead to the AGI era.” “Samsung will respond with its comprehensive capabilities in memory, foundry, system LSI, and advanced packaging AVP,” Kim said. “We have also formed a dedicated team for next-generation HBMs, which will be unrivaled in the industry and will have significant effects.” Samsung Electronics successfully developed the industry’s largest 12-layer HBM3E 12H DRAM with a capacity of 36 gigabytes GB in February 2024. Youn introduced the chip as ”a product with the world’s highest specifications in terms of speed and capacity,” highlighting the unique competitive advantage of the advanced ‘thermal compression non-conductive film TC-NCF technology’ in heat dissipation for HBM. “The thermal resistance of HBM is mainly influenced by the chip spacing, and we have reduced the thickness of the NCF material applied between the chips and enhanced the chip control technology in high-density stacking, while reducing chip spacing through thermal compression technology,” Youn said. Kim anticipated that 36GB HBM3E 12H DRAM, with a capacity 2.25 times larger than the current market’s leader, 16GB HBM3 8H, will quickly become a mainstream product once it is commercialized. “The product has the effect of reducing the total cost of ownership TCO as it allows the same large language model LLM to be serviced with fewer AI servers than before, which is why our customers have high expectations of the product,” he said. ▶ 아내와 알몸이었는데 갑자기 문이 활짝…호텔 투숙객 무단침입에 경악 ▶ 매달 4600만원씩 받았는데…‘돈 줄’ 끊긴 톰 크루즈 딸, 무슨일이 ▶ 조국 “윤대통령, 아주 무참한 방식으로 사과하는 날 올 것” ▶ “아이들 공포 떨게 한 이범수 모의 총포 자진신고했다”…‘이혼소송’ 이윤진 폭로 ▶ 임대주택에 5억 롤스로이스라니…LH가 찾아낸 차 주인 정체는 |
관련링크
- 이전글정부 "우크라 인도적 지원 2억달러 연내 집행" 24.04.18
- 다음글"한국으로 포상 관광 간다해!"…中 수정제약그룹 1100명 단체 방한 24.04.18
댓글목록
등록된 댓글이 없습니다.